| PART |
Description |
Maker |
| SPD6625SMSTXV SPD6620 SPD6620SMSS SPD6620SMSTX SPD |
1.5 - 2 AMPS 200 ? 1000 VOLTS 30 ? 60 nsec ULTRA FAST RECOVERY RECTIFIER
1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 ? 60 nsec ULTRA FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD66201 SPD6620SMSTXV SPD6624SMSS |
1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 60 nsec ULTRA FAST RECOVERY RECTIFIER 2 A, 200 V, SILICON, RECTIFIER DIODE
1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 60 nsec ULTRA FAST RECOVERY RECTIFIER 1.5 A, 900 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
| SDR1004F SDR1010F SDR1008F SDR1006F |
100 AMPS, 400-1000 VOLTS 270 nsec FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR680 |
80 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD54151 SPD5415SMSTXV SPD5417SMSTXV SPD5420SMSTXV |
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 50 V, SILICON, RECTIFIER DIODE
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 200 V, SILICON, RECTIFIER DIODE
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
| SHF1402SMS |
40 AMPS 200- 600 VOLTS 30 nsec HYPER FAST RECTIFIER 4 A, 200 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc.
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| SDR950CT/3 SDR952CT/3 SDR951CT/3 |
120 AMP 100 - 200 VOLTS 35 nsec HYPER FAST COMMONCATHODE CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| SDR10KTXV SDR10GSMS |
10 AMPS 200 - 1000 VOLTS 5 ns STANDARD RECOVERY RECTIFIER
|
Solid States Devices, Inc
|
